Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 105A
Reverse Recovery Time 140 ns
Collector Emitter Breakdown Voltage 600V
Current - Collector (Ic) (Max) 145A
Test Condition 360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 70A
Turn Off Time-Nom (toff) 350 ns
Current - Collector Pulsed (Icm) 440A
Td (on/off) @ 25°C 30ns/120ns
Switching Energy 1.9mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V