Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.7mJ (on), 5mJ (off)
Td (on/off) @ 25°C 44ns/250ns
Current - Collector Pulsed (Icm) 1000A
Turn Off Time-Nom (toff) 595 ns
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 100A
Test Condition 480V, 100A, 1 Ω, 15V
Power Dissipation-Max (Abs) 1000W
Current - Collector (Ic) (Max) 400A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 66ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Number of Terminations 21
Operating Temperature -55°C~150°C TJ