Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 460μJ (on), 180μJ (off)
Td (on/off) @ 25°C 16ns/40ns
Current - Collector Pulsed (Icm) 48A
Turn Off Time-Nom (toff) 238 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Test Condition 450V, 8A, 30 Ω, 15V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 900V
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 125W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ