Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 7.7mJ (on), 7.1mJ (off)
Td (on/off) @ 25°C 30ns/153ns
Current - Collector Pulsed (Icm) 530A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 100A
Test Condition 600V, 100A, 1 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 225A
Collector Emitter Voltage (VCEO) 2.6V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Reach Compliance Code unknown
Max Power Dissipation 1.15kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ