IXYT80N90C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 900V 165A 830W TO268
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Buying Options
Total Price: USD $8.48
Unit Price: USD $8.480881
≥1 USD $8.480881
≥10 USD $8.323828
Inventory: 4057
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C 34ns/90ns
Current - Collector Pulsed (Icm) 360A
Gate Charge 145nC
Turn Off Time-Nom (toff) 201 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 80A
Test Condition 450V, 80A, 2 Ω, 15V
Turn On Time 134 ns
Collector Emitter Breakdown Voltage 900V
Max Collector Current 165A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 830W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Reach Compliance Code unknown
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 830W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series GenX3?, XPT?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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