Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3mJ (on), 1mJ (off)
Td (on/off) @ 25°C 28ns/133ns
Current - Collector Pulsed (Icm) 210A
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 50A
Test Condition 600V, 50A, 5 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 195ns
Max Collector Current 56A
Collector Emitter Voltage (VCEO) 4V
Turn-Off Delay Time 133 ns
Polarity/Channel Type N-CHANNEL
Reach Compliance Code unknown
Max Power Dissipation 290W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ