Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.15V
Test Condition 450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Turn Off Time-Nom (toff) 238 ns
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 16ns/40ns
Switching Energy 460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Additional Feature AVALANCHE RATED
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)