IXYP30N120C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors GenX3 1200V XPT IGBT
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Buying Options
Total Price: USD $7.93
Unit Price: USD $7.933158
≥1 USD $7.933158
≥10 USD $7.48411
≥100 USD $7.06048
≥500 USD $6.660831
≥1000 USD $6.283801
Inventory: 957
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 4.83mm
Length 10.66mm
Height 16mm
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C 19ns/130ns
Current - Collector Pulsed (Icm) 145A
Gate Charge 69nC
Turn Off Time-Nom (toff) 296 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 30A
Test Condition 600V, 30A, 10 Ω, 15V
Turn On Time 71 ns
Collector Emitter Saturation Voltage 3.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-220AB
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 126 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 23 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 500W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 416W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2012
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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