Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 6.75mJ (on), 5.1mJ (off)
Td (on/off) @ 25°C 35ns/176ns
Current - Collector Pulsed (Icm) 700A
Turn Off Time-Nom (toff) 346 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 120A
Test Condition 600V, 100A, 1 Ω, 15V
Collector Emitter Saturation Voltage 2.55V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 240A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 1.5kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ