Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C 32ns/123ns
Current - Collector Pulsed (Icm) 490A
Turn Off Time-Nom (toff) 265 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 100A
Test Condition 600V, 100A, 1 Ω, 15V
Collector Emitter Saturation Voltage 2.9V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 188A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 123 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Reach Compliance Code unknown
Max Power Dissipation 1.15kW
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ