IXYH50N65C3D1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXYH50N65C3D1 IGBT Single Transistor, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 Pins
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Switching Energy 800μJ (on), 800μJ (off)
Td (on/off) @ 25°C 20ns/90ns
Current - Collector Pulsed (Icm) 250A
Gate Charge 86nC
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 36A
Test Condition 400V, 36A, 5 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Current - Collector (Ic) (Max) 132A
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 36ns
Input Type Standard
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 600W
ECCN Code EAR99
Part Status Active
Series XPT?, GenX3?
Published 2007
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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