Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 625W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 90A
Reverse Recovery Time 195ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 4.2V
Test Condition 600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 50A
Turn Off Time-Nom (toff) 372 ns
Current - Collector Pulsed (Icm) 210A
Td (on/off) @ 25°C 28ns/133ns
Switching Energy 3mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V