IXYH40N90C3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors GenX3 900V XPT IGBTs
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.9mJ (on), 1mJ (off)
Td (on/off) @ 25°C 27ns/78ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 74nC
Turn Off Time-Nom (toff) 237 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Test Condition 450V, 40A, 5 Ω, 15V
Turn On Time 81 ns
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 900V
JEDEC-95 Code TO-247AD
Max Collector Current 105A
Collector Emitter Voltage (VCEO) 900V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 600W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 600W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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