Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 80A
Reverse Recovery Time 120 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.85V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 26ns/106ns
Switching Energy 860μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V