Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 125 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 64A
Reverse Recovery Time 195ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 4.8V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 40A
Turn Off Time-Nom (toff) 178 ns
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 24ns/125ns
Switching Energy 3.9mJ (on), 660μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V