IXYH40N120B3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 86A 480W TO247
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Buying Options
Total Price: USD $9.43
Unit Price: USD $9.4336
≥1 USD $9.4336
≥10 USD $7.63928
≥100 USD $7.18989
≥500 USD $6.515846
≥1000 USD $5.976599
Inventory: 358
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 177 ns
Collector Emitter Voltage (VCEO) 2.9V
Max Collector Current 86A
Reverse Recovery Time 100 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 84 ns
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A
Turn Off Time-Nom (toff) 411 ns
Gate Charge 87nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 22ns/177ns
Switching Energy 2.7mJ (on), 1.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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