IXYH30N120C3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
PDF
/
Buying Options
Total Price: USD $71.41
Unit Price: USD $71.4058
≥1 USD $71.4058
≥10 USD $69.1752
≥100 USD $66.94365
≥500 USD $64.7121
≥1000 USD $58.01745
Inventory: 1207
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Number of Elements 1
Element Configuration Single
Power Dissipation 416W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 126 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 66A
Reverse Recovery Time 195ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.7V
Turn On Time 71 ns
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 30A
Turn Off Time-Nom (toff) 296 ns
Gate Charge 69nC
Current - Collector Pulsed (Icm) 133A
Td (on/off) @ 25°C 19ns/130ns
Switching Energy 2.6mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Dimensions
Height 21.46mm
Length 16.26mm
Width 5.3mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXYH30N120C3D1+price,IXYH30N120C3D1+datasheet,IXYH30N120C3D1+in stock,buy+IXYH30N120C3D1,finder+IXYH30N120C3D1,IXYH30N120C3D1+tutorials,IXYH30N120C3D1+download