IXYH20N120C3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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Buying Options
Total Price: USD $10.98
Unit Price: USD $10.9824
≥1 USD $10.9824
≥10 USD $8.88712
≥100 USD $8.3644
≥500 USD $7.580232
≥1000 USD $6.952898
Inventory: 368
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 230W
Base Part Number IXY*20N120
Number of Elements 1
Element Configuration Single
Power Dissipation 230W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 36A
Reverse Recovery Time 195ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 4V
Turn On Time 60 ns
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Turn Off Time-Nom (toff) 220 ns
Gate Charge 53nC
Current - Collector Pulsed (Icm) 88A
Td (on/off) @ 25°C 20ns/90ns
Switching Energy 1.3mJ (on), 500μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Dimensions
Height 21.46mm
Length 16.26mm
Width 5.3mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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