IXYA8N90C3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 460μJ (on), 180μJ (off)
Td (on/off) @ 25°C 16ns/40ns
Current - Collector Pulsed (Icm) 48A
Gate Charge 13.3nC
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A
Test Condition 450V, 8A, 30 Ω, 15V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 900V
Reverse Recovery Time 114 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Power - Max 125W
Input Type Standard
Element Configuration Single
Reach Compliance Code not_compliant
Max Power Dissipation 125W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series GenX3?, XPT?
Published 2014
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Weight 1.946308g
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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