IXXX300N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) PLUS 247
PDF
/
Buying Options
Total Price: USD $70.31
Unit Price: USD $70.305795
≥1 USD $70.305795
≥210 USD $28.052734
≥510 USD $27.115324
≥990 USD $26.65187
Inventory: 3165
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series GenX3?, XPT?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
HTS Code 8541.90.00.00
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.3kW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.3kW
Case Connection COLLECTOR
Input Type Standard
Power - Max 2300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 550A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.3V
Turn On Time 137 ns
Test Condition 400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 100A
Turn Off Time-Nom (toff) 430 ns
IGBT Type PT
Gate Charge 460nC
Current - Collector Pulsed (Icm) 1140A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 3.45mJ (on), 2.86mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
IXXX300N60B3+price,IXXX300N60B3+datasheet,IXXX300N60B3+in stock,buy+IXXX300N60B3,finder+IXXX300N60B3,IXXX300N60B3+tutorials,IXXX300N60B3+download