Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.5mJ (on), 1.3mJ (off)
Td (on/off) @ 25°C 52ns/197ns
Current - Collector Pulsed (Icm) 800A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 160A
Test Condition 400V, 80A, 1 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 290A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 940W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ