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IXXX160N65C4

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.5mJ (on), 1.3mJ (off)
Td (on/off) @ 25°C 52ns/197ns
Current - Collector Pulsed (Icm) 800A
Gate Charge 422nC
IGBT Type PT
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 160A
Test Condition 400V, 80A, 1 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 290A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Input Type Standard
Power Dissipation 940W
Element Configuration Single
Base Part Number 160N65
Max Power Dissipation 940W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series GenX4?, XPT?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

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