IXXX110N65B4H1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
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Buying Options
Total Price: USD $33.2
Unit Price: USD $33.199302
≥1 USD $33.199302
≥210 USD $13.247161
≥510 USD $12.804714
≥990 USD $12.585459
Inventory: 8479
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX4?, XPT?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 880W
Reach Compliance Code not_compliant
Base Part Number 110N65
Element Configuration Single
Power Dissipation 880W
Input Type Standard
Turn On Delay Time 26 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 146 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 240A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.75V
Test Condition 400V, 55A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 110A
IGBT Type PT
Gate Charge 183nC
Current - Collector Pulsed (Icm) 630A
Td (on/off) @ 25°C 38ns/156ns
Switching Energy 2.2mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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