Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C 47ns/125ns
Current - Collector Pulsed (Icm) 900A
Turn Off Time-Nom (toff) 240 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Test Condition 360V, 100A, 1 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 340A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Reach Compliance Code unknown
Max Power Dissipation 1.63kW
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ