IXXK200N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 380A 1630W TO264
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.85mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C 48ns/160ns
Current - Collector Pulsed (Icm) 900A
Gate Charge 315nC
IGBT Type PT
Turn Off Time-Nom (toff) 395 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A
Test Condition 360V, 100A, 1 Ω, 15V
Turn On Time 140 ns
Collector Emitter Saturation Voltage 1.4V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 380A
Collector Emitter Voltage (VCEO) 1.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1630W
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 1.63kW
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
Max Power Dissipation 1.63kW
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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