Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2mJ (on), 950μJ (off)
Td (on/off) @ 25°C 30ns/90ns
Current - Collector Pulsed (Icm) 340A
Turn Off Time-Nom (toff) 220 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 70A
Test Condition 360V, 70A, 2 Ω, 15V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 140 ns
Max Collector Current 170A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Reach Compliance Code unknown
Max Power Dissipation 695W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ