Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C 30ns/120ns
Current - Collector Pulsed (Icm) 440A
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 70A
Test Condition 360V, 70A, 2 Ω, 15V
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 140 ns
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Reach Compliance Code unknown
Max Power Dissipation 695W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ