IXXH75N60C3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 150A 750W TO247
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Buying Options
Total Price: USD $6.64
Unit Price: USD $6.6367
≥1 USD $6.6367
≥10 USD $5.4454
≥100 USD $5.27535
≥500 USD $5.1053
≥1000 USD $4.9343
≥3000 USD $4.42415
Inventory: 2197
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.6mJ (on), 800μJ (off)
Td (on/off) @ 25°C 35ns/90ns
Current - Collector Pulsed (Icm) 300A
Gate Charge 107nC
IGBT Type PT
Turn Off Time-Nom (toff) 185 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
Test Condition 400V, 60A, 5 Ω, 15V
Turn On Time 105 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Reverse Recovery Time 25 ns
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 2.3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 750W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Max Power Dissipation 750W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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