Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.7mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C 35ns/118ns
Current - Collector Pulsed (Icm) 300A
Turn Off Time-Nom (toff) 315 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 60A
Test Condition 400V, 60A, 5 Ω, 15V
Power Dissipation-Max (Abs) 750W
Current - Collector (Ic) (Max) 160A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 75ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Reach Compliance Code compliant
Subcategory Insulated Gate BIP Transistors
Operating Temperature -55°C~175°C TJ