Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 380W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 116A
Reverse Recovery Time 150ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Current - Collector Pulsed (Icm) 230A
Td (on/off) @ 25°C 37ns/145ns
Switching Energy 3.13mJ (on), 1.15mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V