Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.13mJ (on), 1.15mJ (off)
Td (on/off) @ 25°C 37ns/145ns
Current - Collector Pulsed (Icm) 250A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Test Condition 400V, 60A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 116A
Collector Emitter Voltage (VCEO) 2V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 455W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ