Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 62 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Test Condition 360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 36A
Turn Off Time-Nom (toff) 170 ns
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 24ns/62ns
Switching Energy 720μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V