Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 720μJ (on), 330μJ (off)
Td (on/off) @ 25°C 24ns/62ns
Current - Collector Pulsed (Icm) 200A
Turn Off Time-Nom (toff) 170 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 36A
Test Condition 360V, 36A, 5 Ω, 15V
Collector Emitter Saturation Voltage 2.3V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25 ns
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 62 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 600W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ