IXXH50N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors GenX3 600V XPT IGBTs
PDF
/
Buying Options
Total Price: USD $16.11
Unit Price: USD $16.10915
≥1 USD $16.10915
≥10 USD $13.2183
≥100 USD $12.80505
≥500 USD $12.3918
≥1000 USD $11.97855
Inventory: 214
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 670μJ (on), 740μJ (off)
Td (on/off) @ 25°C 27ns/100ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 70nC
IGBT Type PT
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A
Test Condition 360V, 36A, 5 Ω, 15V
Turn On Time 75 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 600W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Max Power Dissipation 600W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?, XPT?
Published 2013
Packaging Tube
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
Recommended For You
IXXH50N60B3+price,IXXH50N60B3+datasheet,IXXH50N60B3+in stock,buy+IXXH50N60B3,finder+IXXH50N60B3,IXXH50N60B3+tutorials,IXXH50N60B3+download