Operating Temperature -55°C~175°C TJ
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.55mJ (on), 480μJ (off)
Td (on/off) @ 25°C 32ns/170ns
Current - Collector Pulsed (Icm) 146A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Test Condition 400V, 30A, 15 Ω, 15V
Collector Emitter Saturation Voltage 1.66V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 65A
Collector Emitter Voltage (VCEO) 2V
Turn-Off Delay Time 170 ns
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 230W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)