Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 270W
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 60A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 24A
Turn Off Time-Nom (toff) 166 ns
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 23ns/77ns
Switching Energy 500μJ (on), 270μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V