Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 550μJ (on), 500μJ (off)
Td (on/off) @ 25°C 23ns/97ns
Current - Collector Pulsed (Icm) 115A
Turn Off Time-Nom (toff) 292 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 24A
Test Condition 400V, 24A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.66V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Max Power Dissipation 270W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ