Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.3mJ (on), 600μJ (off)
Td (on/off) @ 25°C 35ns/143ns
Current - Collector Pulsed (Icm) 600A
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 110A
Test Condition 400V, 55A, 2 Ω, 15V
Collector Emitter Saturation Voltage 1.98V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 234A
Collector Emitter Voltage (VCEO) 2.35V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 880W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ