IXXA50N60B3
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 120A 3-Pin(2+Tab) TO-263AA
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Series XPT?, GenX3?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 40ns
Power Dissipation-Max (Abs) 600W
Turn On Time 75 ns
Test Condition 360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 70nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 27ns/150ns
Switching Energy 670μJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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