Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.8mJ (off)
Td (on/off) @ 25°C 50ns/110ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 190 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Test Condition 480V, 40A, 2.7 Ω, 15V
Collector Emitter Saturation Voltage 2.2V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXS*40N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 280W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ