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IXST30N60C

IXYS
RoHS
/
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 600V 55A 3-Pin(2+Tab) TO-268
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Inventory: 6546
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Fall Time-Max (tf) 120ns
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 700μJ (off)
Td (on/off) @ 25°C 30ns/90ns
Current - Collector Pulsed (Icm) 110A
Gate Charge 100nC
IGBT Type PT
Turn Off Time-Nom (toff) 290 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 480V, 30A, 4.7 Ω, 15V
Turn On Time 70 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 55A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number IXS*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

Alternative Model

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