Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.5mJ (off)
Td (on/off) @ 25°C 30ns/150ns
Current - Collector Pulsed (Icm) 110A
Turn Off Time-Nom (toff) 520 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Test Condition 480V, 30A, 4.7 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 55A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 150 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXS*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ