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IXST15N120BD1

IXYS
RoHS
/
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.5mJ (off)
Td (on/off) @ 25°C 30ns/148ns
Current - Collector Pulsed (Icm) 60A
Gate Charge 57nC
IGBT Type PT
Turn Off Time-Nom (toff) 563 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Test Condition 960V, 15A, 10 Ω, 15V
Turn On Time 55 ns
Collector Emitter Saturation Voltage 3.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 30 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 150W
Input Type Standard
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number IXS*15N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SWITCHING, LOW SWITCHING LOSSES
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

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