Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.5mJ (off)
Td (on/off) @ 25°C 30ns/148ns
Current - Collector Pulsed (Icm) 60A
Turn Off Time-Nom (toff) 563 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Test Condition 960V, 15A, 10 Ω, 15V
Collector Emitter Saturation Voltage 3.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 30 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXS*15N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature FAST SWITCHING, LOW SWITCHING LOSSES
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ