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IXSR35N120BD1

IXYS
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 70A 250W ISOPLUS247
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Technical Details

Compliance

RoHS Status RoHS Compliant
REACH SVHC No SVHC

Technical

Fall Time-Max (tf) 300ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 5mJ (off)
Td (on/off) @ 25°C 36ns/160ns
Current - Collector Pulsed (Icm) 140A
Gate Charge 120nC
IGBT Type PT
Turn Off Time-Nom (toff) 580 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A
Test Condition 960V, 35A, 2.7 Ω, 15V
Turn On Time 67 ns
Collector Emitter Saturation Voltage 3.6V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 40ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.2kV
Rise Time 180ns
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 250W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Base Part Number IXS*35N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2002
Packaging Bulk
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 5.3g
Number of Pins 247
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole

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