Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 5mJ (off)
Td (on/off) @ 25°C 36ns/160ns
Current - Collector Pulsed (Icm) 140A
Turn Off Time-Nom (toff) 580 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A
Test Condition 960V, 35A, 2.7 Ω, 15V
Collector Emitter Saturation Voltage 3.6V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 40ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.2kV
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXS*35N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ