IXSP10N60B2D1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 20A 100W TO220AB
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Dimensions
Width 4.82mm
Length 10.66mm
Height 9.15mm
Technical
Switching Energy 430μJ (off)
Td (on/off) @ 25°C 30ns/180ns
Current - Collector Pulsed (Icm) 30A
Gate Charge 17nC
IGBT Type PT
Turn Off Time-Nom (toff) 530 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Test Condition 480V, 10A, 30 Ω, 15V
Turn On Time 60 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 25 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Rise Time 30ns
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXS*10N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 20A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 100W
Voltage - Rated DC 600V
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Pbfree Code yes
Published 2005
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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