IXSK80N60B
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 160A 500W TO264
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 8V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.2mJ (off)
Td (on/off) @ 25°C 60ns/140ns
Current - Collector Pulsed (Icm) 300A
Gate Charge 240nC
IGBT Type PT
Turn Off Time-Nom (toff) 450 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 80A
Test Condition 480V, 80A, 2.7 Ω, 15V
Turn On Time 120 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 160A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 500W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXS*80N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 10.000011g
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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