IXSH40N60B
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 280W TO247
PDF
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Buying Options
Total Price: USD $3.17
Unit Price: USD $3.168295
≥1 USD $3.168295
≥10 USD $2.988959
≥100 USD $2.819774
≥500 USD $2.660163
≥1000 USD $2.509585
Inventory: 1176
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*40N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 50 ns
Power - Max 280W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 55 ns
Test Condition 480V, 40A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 40A
Turn Off Time-Nom (toff) 190 ns
IGBT Type PT
Gate Charge 190nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 50ns/110ns
Switching Energy 1.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 180ns
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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