Gate-Emitter Voltage-Max 20V
Switching Energy 4mJ (off)
Td (on/off) @ 25°C 40ns/150ns
Current - Collector Pulsed (Icm) 140A
Turn Off Time-Nom (toff) 640 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 35A
Test Condition 960V, 35A, 3 Ω, 15V
Collector Emitter Saturation Voltage 4V
Voltage - Collector Emitter Breakdown (Max) 1400V
Collector Emitter Breakdown Voltage 1.4kV
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.4kV
Turn-Off Delay Time 150 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ