IXSH35N120B
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 70A 300W TO247
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 5mJ (off)
Td (on/off) @ 25°C 36ns/160ns
Current - Collector Pulsed (Icm) 140A
Gate Charge 120nC
IGBT Type PT
Turn Off Time-Nom (toff) 580 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A
Test Condition 960V, 35A, 5 Ω, 15V
Turn On Time 67 ns
Collector Emitter Saturation Voltage 3.6V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number IXS*35N120
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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