IXSH30N60CD1
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 55A 200W TO247AD
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Fall Time-Max (tf) 270ns
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 700μJ (off)
Td (on/off) @ 25°C 30ns/90ns
Current - Collector Pulsed (Icm) 110A
Gate Charge 100nC
Turn Off Time-Nom (toff) 290 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 480V, 30A, 4.7 Ω, 15V
Turn On Time 70 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 50ns
Max Collector Current 55A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 90 ns
Polarity/Channel Type N-CHANNEL
Rise Time 30ns
Transistor Application MOTOR CONTROL
Turn On Delay Time 30 ns
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXS*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 55A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Pbfree Code yes
Published 2000
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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