IXSH30N60AU1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 50A 200W TO247
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 7V
VCEsat-Max 3 V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.5mJ (off)
Td (on/off) @ 25°C 60ns/400ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 110nC
Turn Off Time-Nom (toff) 680 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 30A
Test Condition 480V, 30A, 4.7 Ω, 15V
Turn On Time 190 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Reverse Recovery Time 50 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXS*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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