IXSH24N60
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 48A 150W TO247
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Inventory: 1990
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2mJ (off)
Td (on/off) @ 25°C 100ns/450ns
Current - Collector Pulsed (Icm) 96A
Gate Charge 75nC
IGBT Type PT
Turn Off Time-Nom (toff) 1075 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 24A
Test Condition 480V, 24A, 10 Ω, 15V
Turn On Time 300 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Max Collector Current 48A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 450 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Turn On Delay Time 100 ns
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXS*24N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFAST?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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